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TSM190N08CZ C0G

  • TSM190N08CZ C0G
  • TSM190N08CZ C0G

TSM190N08CZ C0G

TSM190N08CZ C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tube 4.2mOhm @ 90A, 10V ±20V 8600pF @ 30V 160nC @ 10V 75V TO-220-3

SOT-23

TSM190N08CZ C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8600pF @ 30V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
TSM190N08CZ C0G Product Details

TSM190N08CZ C0G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8600pF @ 30V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

TSM190N08CZ C0G Features


a 75V drain to source voltage (Vdss)


TSM190N08CZ C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM190N08CZ C0G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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