FDFMA2P857 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDFMA2P857 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
1.4W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Turn On Delay Time
9 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
120m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
435pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3A Ta
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Rise Time
11ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
-3A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
-20V
FET Feature
Schottky Diode (Isolated)
Height
750μm
Length
2mm
Width
2mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FDFMA2P857 Product Details
FDFMA2P857 Description
FDFMA2P857 is a p-CHANNEL Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 20V. The operating temperature of the FDFMA2P857 is -55??C~150??C TJ and its maximum power dissipation is 1.4W Ta. FDFMA2P857 has 6 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Breakdown Voltage of FDFMA2P857 is 20V.