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TSM230N06CI C0G

TSM230N06CI C0G

TSM230N06CI C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel 23mOhm @ 20A, 10V ±20V 1680pF @ 25V 28nC @ 10V 60V TO-220-3 Full Pack, Isolated Tab

SOT-23

TSM230N06CI C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 42W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
TSM230N06CI C0G Product Details

TSM230N06CI C0G Overview


The maximum input capacitance of this device is 1680pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 60V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

TSM230N06CI C0G Features


a 60V drain to source voltage (Vdss)


TSM230N06CI C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM230N06CI C0G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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