TSM80N950CI C0G Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 121 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 691pF @ 100V.There is no drain current on this device since the maximum continuous current it can conduct is 6A.There is a peak drain current of 18A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 800V, it should remain above the 800V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TSM80N950CI C0G Features

the avalanche energy rating (Eas) is 121 mJ
based on its rated peak drain current 18A.
a 800V drain to source voltage (Vdss)

TSM80N950CI C0G Applications

There are a lot of Taiwan Semiconductor Corporation
TSM80N950CI C0G applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.