CSD16408Q5C

new-10%

Manufacturer part number:CSD16408Q5C

Manufacturer:Texas Instruments

Description:MOSFET DualCool N-Channel NexFET Power MOSFET

Case Package:SOT-23

Datasheet:CSD16408Q5C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	NRND (Last Updated: 4 weeks ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD16408
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3.1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.1W
Case Connection	DRAIN
Turn On Delay Time	11.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	22A Ta 113A Tc
Gate Charge (Qg) (Max) @ Vgs	8.9nC @ 4.5V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+16V, -12V
Fall Time (Typ)	10.8 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	113A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	25V
Nominal Vgs	1.8 V
Height	1.05mm
Length	5mm
Width	6mm
Thickness	1mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead