CSD16411Q3

new-10%

Manufacturer part number:CSD16411Q3

Manufacturer:Texas Instruments

Description:MOSFET N-CH 25V 56A 8-SON

Case Package:SOT-23

Datasheet:CSD16411Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD16411
Pin Count	8
Number of Elements	1
Power Dissipation-Max	2.7W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.7W
Case Connection	DRAIN
Turn On Delay Time	5.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 4.5V
Rise Time	7.8ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+16V, -12V
Fall Time (Typ)	3.1 ns
Turn-Off Delay Time	6 ns
Continuous Drain Current (ID)	56A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Nominal Vgs	2 V
Feedback Cap-Max (Crss)	43 pF
Length	3.3mm
Width	3.3mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead