CSD16570Q5BT

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CSD16570Q5BT

Manufacturer part number:CSD16570Q5BT

Manufacturer:Texas Instruments

Description:CSD16570Q5BT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD16570Q5BT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	24.012046mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD16570
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.2W Ta 195W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.59m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 12V
Current - Continuous Drain (Id) @ 25°C	100A Ta
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	156 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	59A
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	400A
Length	5mm
Width	6mm
Thickness	950μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead