CSD17303Q5

new-10%

CSD17303Q5

Manufacturer part number:CSD17303Q5

Manufacturer:Texas Instruments

Description:CSD17303Q5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD17303Q5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD17303
Pin Count	8
Number of Elements	1
Power Dissipation-Max	3.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.2W
Case Connection	DRAIN
Turn On Delay Time	11.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 25A, 8V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3420pF @ 15V
Current - Continuous Drain (Id) @ 25°C	32A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 4.5V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	10.4 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	100A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.0037Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	530 mJ
Nominal Vgs	1.1 V
Height	1.05mm
Length	5mm
Width	6mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead