CSD17309Q3

new-10%

Manufacturer part number:CSD17309Q3

Manufacturer:Texas Instruments

Description:Trans MOSFET N-CH 30V 20A 8-Pin SON T/R

Case Package:SOT-23

Datasheet:CSD17309Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD17309
Pin Count	8
Number of Elements	1
Power Dissipation-Max	2.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.8W
Case Connection	DRAIN
Turn On Delay Time	6.1 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.4m Ω @ 18A, 8V
Vgs(th) (Max) @ Id	1.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1440pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	9.9ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	13.2 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	30V
Nominal Vgs	1.2 V
Feedback Cap-Max (Crss)	56 pF
Height	1.1mm
Length	3.3mm
Width	3.3mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead