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CSD18511KTTT

CSD18511KTTT

CSD18511KTTT

Texas Instruments

N-Channel Tape & Reel (TR) 2.6m Ω @ 100A, 10V ±20V 5940pF @ 20V 64nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

CSD18511KTTT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18511
Number of Elements 1
Power Dissipation-Max 188W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 20V
Current - Continuous Drain (Id) @ 25°C 110A Ta 194A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 110A
Drain-source On Resistance-Max 0.0042Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 156 mJ
Height 4.83mm
Length 10.18mm
Width 8.41mm
Thickness 4.44mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.100000 $2.1
10 $1.981132 $19.81132
100 $1.868993 $186.8993
500 $1.763200 $881.6
1000 $1.663397 $1663.397
CSD18511KTTT Product Details

CSD18511KTTT Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 156 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5940pF @ 20V.A device's drain current is its maximum continuous current, and this device's drain current is 110A.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 40V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

CSD18511KTTT Features


the avalanche energy rating (Eas) is 156 mJ
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)


CSD18511KTTT Applications


There are a lot of Texas Instruments
CSD18511KTTT applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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