STF28N65M2

new-10%

Manufacturer part number:STF28N65M2

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 650V 20A TO220FP

Case Package:SOT-23

Datasheet:STF28N65M2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ M2
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STF28
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	13.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1440pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Turn-Off Delay Time	59 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.18Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	760 mJ
Height	16.4mm
Length	10.4mm
Width	4.6mm
RoHS Status	ROHS3 Compliant