CSD18534Q5AT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website
SOT-23
CSD18534Q5AT Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD18534
Number of Elements
1
Power Dissipation-Max
3.1W Ta 77W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
5.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.8m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1770pF @ 30V
Current - Continuous Drain (Id) @ 25°C
50A Ta
Gate Charge (Qg) (Max) @ Vgs
11.1nC @ 4.5V
Rise Time
5.5ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
69A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.0124Ohm
Pulsed Drain Current-Max (IDM)
229A
DS Breakdown Voltage-Min
60V
Feedback Cap-Max (Crss)
6.5 pF
Length
4.9mm
Width
6mm
Thickness
1mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.829984
$1.829984
10
$1.726400
$17.264
100
$1.628679
$162.8679
500
$1.536490
$768.245
1000
$1.449519
$1449.519
CSD18534Q5AT Product Details
CSD18534Q5AT Description
Utilize this Texas Instruments CSD18534Q5AT power MOSFET to create a powerful common source amplifier. 3100 mW is the most power it can dissipate. For efficient mounting and secure delivery, this component will be packaged in tape and reel. The enhancement mode is used by this N channel MOSFET transistor. Nexfet technology was used to create this gadget. The operating temperature range for this MOSFET transistor is between -55 ??C and 150 ??C.