CSD25301W1015

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CSD25301W1015

Manufacturer part number:CSD25301W1015

Manufacturer:Texas Instruments

Description:CSD25301W1015 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25301W1015 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFBGA, DSBGA
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD25301
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.5W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	4 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V
Rise Time	2ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	2.2A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.22Ohm
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	750 mV
Feedback Cap-Max (Crss)	40 pF
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead