IRFBA90N20DPBF

new-10%

Manufacturer part number:IRFBA90N20DPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tube 23m Ω @ 59A, 10V ±30V 6080pF @ 25V 240nC @ 10V TO-273AA

Case Package:SOT-23

Datasheet:IRFBA90N20DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-273AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2004
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	23Ohm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	98A
Number of Elements	1
Power Dissipation-Max	650W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	650W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 59A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	98A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	160ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	39 ns
Continuous Drain Current (ID)	98A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	95A
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	960 mJ
Nominal Vgs	5 V
Height	15.0114mm
Length	10.9982mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free