CSD85302L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
SOT-23
CSD85302L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-XFLGA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
1.7W
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Base Part Number
CSD85302
Number of Elements
2
Configuration
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Turn On Delay Time
37 ns
FET Type
2 N-Channel (Dual) Common Drain
Transistor Application
SWITCHING
Gate Charge (Qg) (Max) @ Vgs
7.8nC @ 4.5V
Rise Time
54ns
Fall Time (Typ)
99 ns
Turn-Off Delay Time
173 ns
Continuous Drain Current (ID)
7A
Gate to Source Voltage (Vgs)
10V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Feedback Cap-Max (Crss)
79 pF
Length
1.35mm
Width
1.35mm
Thickness
200μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.921352
$0.921352
10
$0.869200
$8.692
100
$0.820000
$82
500
$0.773585
$386.7925
1000
$0.729797
$729.797
CSD85302L Product Details
CSD85302L Description
This 20 V.18.7 mQ135 mm x 1.35 mm LGA Dua NexFETm power MOSFET is designed to minimize resistance, small footprint and common leakage configuration with minimal footprint, making it ideal for battery-powered applications in small handheld devices.