CSD87501L datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available on our website
SOT-23
CSD87501L Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
10-XFLGA
Number of Pins
10
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
NexFET™
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Max Power Dissipation
2.5W
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
CSD87501
Number of Elements
2
Number of Channels
2
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
164 ns
FET Type
2 N-Channel (Dual) Common Drain
Transistor Application
SWITCHING
Vgs(th) (Max) @ Id
2.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
260ns
Drain to Source Voltage (Vdss)
30V
Fall Time (Typ)
712 ns
Turn-Off Delay Time
709 ns
Continuous Drain Current (ID)
14A
Gate to Source Voltage (Vgs)
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Drain to Source Resistance
6.6mOhm
Feedback Cap-Max (Crss)
198 pF
Height
200μm
Length
3.37mm
Width
1.47mm
Thickness
200μm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.03000
$1.03
500
$1.0197
$509.85
1000
$1.0094
$1009.4
1500
$0.9991
$1498.65
2000
$0.9888
$1977.6
2500
$0.9785
$2446.25
CSD87501L Product Details
CSD87501L Description
This 30V, 6.6m Ω, 3.37mx1.47mLGA Dual NexFET power MOSFET is designed to minimize resistance and gate charge in a small area. Its small size and common drain configuration make the device ideal for multi-battery applications and small handheld devices.