SN75451BDR Overview

In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) is used.There is a package in the form of Cut Tape (CT).For its configuration, it incorporates 2 drivers.Surface Mount is the way in which it is mounted.A supply voltage of 4.75V~5.25V demonstrates its superiority.Gate drivers is designed wGate driversh a gate type of N-Channel, P-Channel MOSFET.Temperature range 0°C~70°C TA is allowed for this device.A type of Inverting is used for input in this program.It's configured with 8 terminations.There are various parts that can be found under its base part number SN75451.The device is mounted with Surface Mount.At the time of design, it is configured with 8 pins.Specification is for 5V supply voltage operation.Mosfet driver employs an interface chip called AND GATE BASED PERIPHERAL DRIVER as Mosfet drivers interface chip.Several electronic components are included in its subcategory of Peripheral Drivers.On the board, there are 8 component pins.300mA is the maximum output current supported by the device.Having the maximum power dissipation of 725mW indicates its maximum capacity to conduct power losses without overheating.In order to ensure greater stability, it is recommended to keep the supply current at 65mA.Using its power supply of 5V, it provides solutions to diverse power supply problems.In this case, it outputs 30V voltage.Mosfet gate drivers is recommended that 5V be set as the operating supply voltage.Mosfet gate drivers receives an input of GATED.

SN75451BDR Features

Embedded in the Cut Tape (CT) package
2 drivers
Employing a gate type of N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 725mW

SN75451BDR Applications

There are a lot of Texas Instruments SN75451BDR gate drivers applications.

• High-voltage isolated DC-DC converters
• UPS systems
• A/D drivers
• Telecom switch mode power supplies
• Line drivers
• White Goods - Air Conditioner, Washing Machine,
• Refrigerator
• Power factor correction (PFC) circuits
• High-speed communications
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,