TPS1100DG4 Overview

In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 15V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 15V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 180mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 2VV.The transistor must receive a -15V drain to source voltage (Vdss) in order to function.

TPS1100DG4 Features

a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 180mOhm
a -15V drain to source voltage (Vdss)

TPS1100DG4 Applications

There are a lot of Texas Instruments
TPS1100DG4 applications of single MOSFETs transistors.

• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.