DMHC3025LSD-13

new-10%

DMHC3025LSD-13

Manufacturer part number:DMHC3025LSD-13

Manufacturer:Diodes Incorporated

Description:MOSFET 2N/2P-CH 30V 8SO

Case Package:SOT-23

Datasheet:DMHC3025LSD-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Max Power Dissipation	1.5W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	DMHC3025LSD
Reference Standard	AEC-Q101
Number of Elements	4
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	7.5 ns
FET Type	2 N and 2 P-Channel (H-Bridge)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	590pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A 4.2A
Gate Charge (Qg) (Max) @ Vgs	11.7nC @ 10V
Rise Time	4.9ns
Drain to Source Voltage (Vdss)	30V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	13.5 ns
Turn-Off Delay Time	28.2 ns
Continuous Drain Current (ID)	4.2A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	60A
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.7mm
Length	4.95mm
Width	3.95mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free