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TRS16N65FB,S1Q

TRS16N65FB,S1Q

TRS16N65FB,S1Q

Toshiba

Silicon Carbide Schottky Tube TO-247-3

SOT-23

TRS16N65FB,S1Q Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247
Material SiC
Mounting Style Through Hole
ECCN (US) EAR99
Peak Reverse Repetitive Voltage (V) 650
Maximum Continuous Forward Current (A) 16
Peak Non-Repetitive Surge Current (A) 130
Peak Forward Voltage (V) 1.6@8A
Peak Reverse Current (uA) 40
Maximum Power Dissipation (mW) 166000
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Standard Package Name TO-247
Supplier Package TO-247
Military No
Mounting Through Hole
Package Height 20.95
Package Length 15.94
Package Width 5.02
PCB changed 3
Tab Tab
Maximum Operating Temperature + 175 C
Manufacturer Toshiba
Brand Toshiba
RoHS Details
Package Tube
Base Product Number TRS16N65
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current - Average Rectified (Io) (per Diode) 8A (DC)
Packaging Tube
Series -
Type Schottky Diode
Subcategory Diodes & Rectifiers
Technology SiC
Pin Count 3
Configuration Dual Common Cathode
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 8 A
Operating Temperature - Junction 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Product Type Schottky Diodes & Rectifiers
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Product Schottky Silicon Carbide Diodes
Vf - Forward Voltage 1.6 V
Product Category Schottky Diodes & Rectifiers
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.367311 $8.367311
10 $7.893689 $78.93689
100 $7.446877 $744.6877
500 $7.025355 $3512.6775
1000 $6.627694 $6627.694
TRS16N65FB,S1Q Product Details

TRS16N65FB,S1Q Overview


The datasheets indicate that the peak forward voltage is [email protected] any given time, this device consumes about 16 continuous forward current.

TRS16N65FB,S1Q Features


the forward peak voltage is 1.6@8A


TRS16N65FB,S1Q Applications


There are a lot of Toshiba
TRS16N65FB,S1Q applications of RF diodes.


  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes

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