TRS3E65F,S1Q

new-10%

Manufacturer part number:TRS3E65F,S1Q

Manufacturer:Toshiba

Description:Silicon Carbide Schottky 12pF @ 650V, 1MHz Tube TO-220F-2L

Case Package:SOT-23

Datasheet:TRS3E65F,S1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Package / Case	TO-220F-2L
Mounting Type	Through Hole
Supplier Device Package	TO-220-2L
Material	SiC
Mounting Style	Through Hole
ECCN (US)	EAR99
Peak Reverse Repetitive Voltage (V)	650
Maximum Continuous Forward Current (A)	3
Peak Non-Repetitive Surge Current (A)	27
Peak Forward Voltage (V)	1.6
Peak Reverse Current (uA)	20
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Supplier Package	TO-220
Military	No
Mounting	Through Hole
Package Height	9.08
Package Length	10.05
Package Width	4.45
PCB changed	2
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	-
Manufacturer	Toshiba
Brand	Toshiba
RoHS	Details
Package	Tube
Base Product Number	TRS3E65
Mfr	Toshiba Semiconductor and Storage
Product Status	Active
Packaging	Tube
Series	-
Type	Schottky Diode
Subcategory	Diodes & Rectifiers
Technology	SiC
Pin Count	2
Configuration	Single
Speed	No Recovery Time > 500mA (Io)
Diode Type	Silicon Carbide Schottky
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 3 A
Operating Temperature - Junction	175°C (Max)
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	3A
Product Type	Schottky Diodes & Rectifiers
Capacitance @ Vr, F	12pF @ 650V, 1MHz
Reverse Recovery Time (trr)	0 ns
Product	Schottky Silicon Carbide Diodes
Vf - Forward Voltage	1.45 V
Product Category	Schottky Diodes & Rectifiers
RoHS Status	RoHS Compliant