1SS384TE85LF datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
1SS384TE85LF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-82
Number of Pins
82
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
20μA @ 10V
Voltage - Forward (Vf) (Max) @ If
500mV @ 100mA
Forward Current
100mA
Operating Temperature - Junction
125°C Max
Forward Voltage
230mV
Max Reverse Voltage (DC)
10V
Average Rectified Current
100mA
Peak Reverse Current
20μA
Max Repetitive Reverse Voltage (Vrrm)
15V
Peak Non-Repetitive Surge Current
200mA
Diode Configuration
2 Independent
Max Forward Surge Current (Ifsm)
1A
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.376000
$0.376
10
$0.354717
$3.54717
100
$0.334639
$33.4639
500
$0.315697
$157.8485
1000
$0.297827
$297.827
1SS384TE85LF Product Details
1SS384TE85LF Overview
Devices that have a forward voltage of 230mV will operate.There will be no operation of this device when the forward voltage is set to 100mA.A reverse voltage peak of 20μA is used to power devices like this one.In electronic or electrical devices, this is the device that produces the most 100mW heat (energy loss or waste).
1SS384TE85LF Features
230mV forward voltage a peak voltage of 20μA a reverse voltage peak of 20μA
1SS384TE85LF Applications
There are a lot of Toshiba Semiconductor and Storage 1SS384TE85LF applications of rectifier diode array.