1SS403,H3F

new-10%

Manufacturer part number:1SS403,H3F

Manufacturer:Toshiba Semiconductor and Storage

Description:DIODE GEN PURP 200V 100MA USC

Case Package:SOT-23

Datasheet:1SS403,H3F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Number of Pins	2
Weight	32.998845mg
Diode Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2008
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	125°C
Min Operating Temperature	-55°C
HTS Code	8541.10.00.70
Max Power Dissipation	200mW
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	1SS403
Reference Standard	AEC-Q101
Number of Elements	1
Element Configuration	Single
Speed	Small Signal =< 200mA (Io), Any Speed
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 200V
Voltage - Forward (Vf) (Max) @ If	1.2V @ 100mA
Forward Current	300mA
Operating Temperature - Junction	125°C Max
Max Surge Current	2A
Output Current-Max	0.1A
Forward Voltage	1.2V
Max Reverse Voltage (DC)	200V
Average Rectified Current	100mA
Reverse Recovery Time	60 ns
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	250V
Capacitance @ Vr, F	3pF @ 0V 1MHz
Peak Non-Repetitive Surge Current	2A
Reverse Voltage (DC)	200V
Height	900μm
Length	1.7mm
Width	1.25mm
RoHS Status	RoHS Compliant