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2SA1020-Y,T6F(J

  • 2SA1020-Y,T6F(J
  • 2SA1020-Y,T6F(J

2SA1020-Y,T6F(J

2SA1020-Y,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

SOT-23

2SA1020-Y,T6F(J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Operating Temperature 150°C TJ
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 100MHz

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