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2SA1162S-GR,LF(D

2SA1162S-GR,LF(D

2SA1162S-GR,LF(D

Toshiba Semiconductor and Storage

TRANSISTOR PNP 50V 150MA S-MINI

SOT-23

2SA1162S-GR,LF(D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant

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