TSC5304EDCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC5304EDCP ROG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
35W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
17 @ 1A 5V
Current - Collector Cutoff (Max)
250μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 2.5A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
4A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.25969
$1.29845
TSC5304EDCP ROG Product Details
TSC5304EDCP ROG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 17 @ 1A 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-252, (D-Pak) supplier package.The device has a 400V maximal voltage - Collector Emitter Breakdown.
TSC5304EDCP ROG Features
the DC current gain for this device is 17 @ 1A 5V the vce saturation(Max) is 1.5V @ 500mA, 2.5A the supplier device package of TO-252, (D-Pak)
TSC5304EDCP ROG Applications
There are a lot of Taiwan Semiconductor Corporation TSC5304EDCP ROG applications of single BJT transistors.