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2SA1873-GR(TE85L,F

2SA1873-GR(TE85L,F

2SA1873-GR(TE85L,F

Toshiba Semiconductor and Storage

Bipolar Transistors - BJT -150mA -50V

SOT-23

2SA1873-GR(TE85L,F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 200mW
Polarity PNP
Element Configuration Dual
Power - Max 200mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual) Matched Pair, Common Emitter
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 80MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 200
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.063038 $0.063038
500 $0.046351 $23.1755
1000 $0.038626 $38.626
2000 $0.035436 $70.872
5000 $0.033119 $165.595
10000 $0.030808 $308.08
15000 $0.029795 $446.925
50000 $0.029297 $1464.85

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