2SA1943-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA1943-O(Q) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3PL
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2000
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Voltage - Rated DC
-230V
Max Power Dissipation
150W
Current Rating
-15A
Frequency
30MHz
Base Part Number
2SA1943
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Gain Bandwidth Product
30MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
230V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
230V
Collector Emitter Saturation Voltage
-3V
Collector Base Voltage (VCBO)
230V
Emitter Base Voltage (VEBO)
5V
hFE Min
80
Height
26mm
Length
20.5mm
Width
5.2mm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.23000
$3.23
10
$2.88800
$28.88
25
$2.59880
$64.97
100
$2.36780
$236.78
300
$2.13677
$641.031
500
$1.91730
$958.65
2SA1943-O(Q) Product Details
2SA1943-O(Q) Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In extreme cases, the collector current can be as low as 15A volts.
2SA1943-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V a collector emitter saturation voltage of -3V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V the current rating of this device is -15A
2SA1943-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1943-O(Q) applications of single BJT transistors.