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2SA1943-O(Q)

2SA1943-O(Q)

2SA1943-O(Q)

Toshiba Semiconductor and Storage

2SA1943-O(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SA1943-O(Q) Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Voltage - Rated DC -230V
Max Power Dissipation 150W
Current Rating -15A
Frequency 30MHz
Base Part Number 2SA1943
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Gain Bandwidth Product 30MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 230V
Collector Emitter Saturation Voltage -3V
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Height 26mm
Length 20.5mm
Width 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.23000 $3.23
10 $2.88800 $28.88
25 $2.59880 $64.97
100 $2.36780 $236.78
300 $2.13677 $641.031
500 $1.91730 $958.65
2SA1943-O(Q) Product Details

2SA1943-O(Q) Overview


In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In extreme cases, the collector current can be as low as 15A volts.

2SA1943-O(Q) Features


the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A

2SA1943-O(Q) Applications


There are a lot of Toshiba Semiconductor and Storage 2SA1943-O(Q) applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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