SMMBTA06WT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.100MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 500mA volts.

SMMBTA06WT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz

SMMBTA06WT1G Applications

There are a lot of ON Semiconductor SMMBTA06WT1G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter