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2SC4116-GR,LF

2SC4116-GR,LF

2SC4116-GR,LF

Toshiba Semiconductor and Storage

2SC4116-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC4116-GR,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Weight 6.208546mg
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Base Part Number 2SC4116
Gain Bandwidth Product 80MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 70
Continuous Collector Current 150mA
Height 900μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.040745 $0.040745
10 $0.038439 $0.38439
100 $0.036263 $3.6263
500 $0.034211 $17.1055
1000 $0.032274 $32.274
2SC4116-GR,LF Product Details

2SC4116-GR,LF Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2mA 6V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at 150mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 150mA volts.

2SC4116-GR,LF Features


the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SC4116-GR,LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SC4116-GR,LF applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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