2SC4116-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SC4116-GR,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Weight
6.208546mg
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Reach Compliance Code
unknown
Base Part Number
2SC4116
Gain Bandwidth Product
80MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
100mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
70
Continuous Collector Current
150mA
Height
900μm
Length
2mm
Width
1.25mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.040745
$0.040745
10
$0.038439
$0.38439
100
$0.036263
$3.6263
500
$0.034211
$17.1055
1000
$0.032274
$32.274
2SC4116-GR,LF Product Details
2SC4116-GR,LF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2mA 6V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at 150mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4116-GR,LF Features
the DC current gain for this device is 70 @ 2mA 6V a collector emitter saturation voltage of 100mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SC4116-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4116-GR,LF applications of single BJT transistors.