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2SC5065-Y(TE85L,F)

2SC5065-Y(TE85L,F)

2SC5065-Y(TE85L,F)

Toshiba Semiconductor and Storage

Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V

SOT-23

2SC5065-Y(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Element Configuration Single
Power - Max 100mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Collector Emitter Breakdown Voltage 12V
Gain 12dB ~ 17dB
Max Breakdown Voltage 12V
Frequency - Transition 7GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.996531 $1.996531
10 $1.883520 $18.8352
100 $1.776906 $177.6906
500 $1.676326 $838.163
1000 $1.581440 $1581.44

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