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2SC5085-Y(TE85L,F)

2SC5085-Y(TE85L,F)

2SC5085-Y(TE85L,F)

Toshiba Semiconductor and Storage

Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R

SOT-23

2SC5085-Y(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 100mW
Element Configuration Single
Power - Max 100mW
Gain Bandwidth Product 7 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 20mA 10V
Collector Emitter Breakdown Voltage 12V
Gain 11dB ~ 16.5dB
Transition Frequency 5000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 80
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.627123 $4.627123
10 $4.365210 $43.6521
100 $4.118123 $411.8123
500 $3.885022 $1942.511
1000 $3.665115 $3665.115

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