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2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

Toshiba Semiconductor and Storage

Trans Darlington NPN 100V 2A 3-Pin TO-92 Mod T/R

SOT-23

2SD2206(TE6,F,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Element Configuration Single
Power - Max 900mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector (Ic) (Max) 2A
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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