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2SD2206A(T6SEP,F,M

2SD2206A(T6SEP,F,M

2SD2206A(T6SEP,F,M

Toshiba Semiconductor and Storage

TRANS NPN 2A 120V TO226-3

SOT-23

2SD2206A(T6SEP,F,M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 2A

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