2SK2719(F)

new-10%

Manufacturer part number:2SK2719(F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 900V 3A TO-3PN

Case Package:SOT-23

Datasheet:2SK2719(F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	1998
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	125W Tc
Power Dissipation	125W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free