2SK2866(F)

new-10%

Manufacturer part number:2SK2866(F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 600V 10A TO-220AB

Case Package:SOT-23

Datasheet:2SK2866(F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Power Dissipation	125W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	750m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2040pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	36 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free