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2SK2963(TE12L,F)

2SK2963(TE12L,F)

2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 1A PW-MINI

SOT-23

2SK2963(TE12L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 1A
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 1.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 700m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 175 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 1.6mm
Length 4.6mm
Width 2.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.367664 $0.367664
10 $0.346852 $3.46852
100 $0.327220 $32.722
500 $0.308697 $154.3485
1000 $0.291224 $291.224

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