Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SK3127(TE24L,Q)

2SK3127(TE24L,Q)

2SK3127(TE24L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 45A TO220SM

SOT-23

2SK3127(TE24L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 12mOhm
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 65W Tc
Element Configuration Single
Power Dissipation 65W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.3nF
Drain to Source Resistance 12mOhm
Rds On Max 12 mΩ
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.297772 $8.297772
10 $7.828087 $78.28087
100 $7.384988 $738.4988
500 $6.966969 $3483.4845
1000 $6.572613 $6572.613

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News