IRF610S

new-10%

Manufacturer part number:IRF610S

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 3.3A D2PAK

Case Package:SOT-23

Datasheet:IRF610S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	D2PAK
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3W Ta 36W Tc
Element Configuration	Single
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	140pF
Drain to Source Resistance	1.5Ohm
Rds On Max	1.5 Ω
Height	4.83mm
Length	10.67mm
Width	9.65mm
RoHS Status	Non-RoHS Compliant