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2SK3132(Q)

2SK3132(Q)

2SK3132(Q)

Toshiba Semiconductor and Storage

Trans MOSFET N-CH 500V 50A 3-Pin(3+Tab) TO-3PL

SOT-23

2SK3132(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 95m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Ta
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 245 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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