2SK3309(Q)

new-10%

Manufacturer part number:2SK3309(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 450V 10A TO220FL

Case Package:SOT-23

Datasheet:2SK3309(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3, Short Tab
Operating Temperature	150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	480mOhm
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	65W Tc
Element Configuration	Single
Power Dissipation	65W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	650m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	450V
RoHS Status	RoHS Compliant
Lead Free	Lead Free