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CBS10S40,L3F

CBS10S40,L3F

CBS10S40,L3F

Toshiba Semiconductor and Storage

Diode Schottky Barrier 40V 1A 2 2CSTB

SOT-23

CBS10S40,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, No Lead
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PBCC-N2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 150μA @ 40V
Voltage - Forward (Vf) (Max) @ If 550mV @ 1A
Case Connection CATHODE
Forward Current 1A
Operating Temperature - Junction 125°C Max
Output Current-Max 1A
Max Reverse Voltage (DC) 40V
Average Rectified Current 1A
Max Repetitive Reverse Voltage (Vrrm) 40V
Capacitance @ Vr, F 120pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 3A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.06400 $0.64

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