HN1D01FE(TE85L,F) datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
HN1D01FE(TE85L,F) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Subcategory
Other Diodes
Max Power Dissipation
100mW
Element Configuration
Common Anode
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
500nA @ 80V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 100mA
Forward Current
100mA
Operating Temperature - Junction
150°C Max
Max Surge Current
2A
Forward Voltage
920mV
Max Reverse Voltage (DC)
80V
Average Rectified Current
100mA
Reverse Recovery Time
1.6 ns
Peak Reverse Current
500nA
Diode Configuration
2 Pair Common Anode
Recovery Time
1.6 ns
Reverse Voltage (DC)
80V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.373000
$0.373
10
$0.351887
$3.51887
100
$0.331969
$33.1969
500
$0.313178
$156.589
1000
$0.295451
$295.451
HN1D01FE(TE85L,F) Product Details
HN1D01FE(TE85L,F) Overview
A forward voltage of 920mV will enable the device to operate.Surge currents should be monitored and prevented from exceeding 2A.When the forward voltage is set to 100mA, this device will operate.There is a reverse voltage peak of 500nA on devices like this one.In electronic or electrical devices, this is the device that produces the most 100mW heat (energy loss or waste).
HN1D01FE(TE85L,F) Features
920mV forward voltage a peak voltage of 500nA a reverse voltage peak of 500nA
HN1D01FE(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage HN1D01FE(TE85L,F) applications of rectifier diode array.