12CWQ10FN datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
12CWQ10FN Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Packaging
Tube
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Capacitance
183pF
Voltage - Rated DC
100V
Current Rating
6A
Base Part Number
12CWQ10
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1mA @ 100V
Voltage - Forward (Vf) (Max) @ If
800mV @ 6A
Max Reverse Leakage Current
1mA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
330A
Voltage - DC Reverse (Vr) (Max)
100V
Breakdown Voltage
100V
Current - Average Rectified (Io)
6A
Forward Voltage
800mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
6A
Peak Non-Repetitive Surge Current
330A
Diode Configuration
1 Pair Common Cathode
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
500
$0.6732
$336.6
1000
$0.6664
$666.4
1500
$0.6596
$989.4
2000
$0.6528
$1305.6
2500
$0.646
$1615
12CWQ10FN Product Details
12CWQ10FN Overview
This device will operate when the forward voltage is set to 800mV.A surge current should be monitored and should not exceed 330A.From the part, a current of 6A can be drawn.Capacitance in this device is approximately 183pF farads.When reverse biased, its maximum reverse leakage current is 1mA, which is the current coming from that semiconductor device.
12CWQ10FN Features
800mV forward voltage 183pF farads
12CWQ10FN Applications
There are a lot of Vishay Semiconductor Diodes Division 12CWQ10FN applications of rectifier diode array.