HN4A51JTE85LF

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Manufacturer part number:HN4A51JTE85LF

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A

Case Package:SOT-23

Datasheet:HN4A51JTE85LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74A, SOT-753
Number of Pins	5
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	300mW
Polarity	PNP
Element Configuration	Dual
Power - Max	300mW
Gain Bandwidth Product	100MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	120V
Collector Emitter Saturation Voltage	-300mV
Max Breakdown Voltage	120V
Collector Base Voltage (VCBO)	-120V
Emitter Base Voltage (VEBO)	-5V
hFE Min	200
Radiation Hardening	No
RoHS Status	RoHS Compliant