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JDH3D01STE85LF

JDH3D01STE85LF

JDH3D01STE85LF

Toshiba Semiconductor and Storage

JDH3D01STE85LF datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

JDH3D01STE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Package / Case SC-75, SOT-416
Surface Mount YES
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.70
Capacitance 600FF
Subcategory Rectifier Diodes
Reach Compliance Code unknown
Number of Elements 1
Max Current Rating 25mA
Element Configuration Dual
Diode Type Schottky
Forward Current 25mA
Output Current-Max 0.025A
Max Repetitive Reverse Voltage (Vrrm) 4V
Rep Pk Reverse Voltage-Max 4V
Capacitance @ Vr, F 0.6pF @ 0.2V 1MHz
RoHS Status RoHS Compliant
JDH3D01STE85LF Product Details

JDH3D01STE85LF Overview


This is 600FF in terms of capacitance.This device can read a maximum output current voltage of 0.025A.

JDH3D01STE85LF Features


600FF capacitance
a maximum output current voltage of 0.025A

JDH3D01STE85LF Applications


There are a lot of Toshiba Semiconductor and Storage JDH3D01STE85LF applications of RF diodes.

  • Phase detection
  • Sensor interfaces of security systems
  • Bandswitch for TV tuners
  • Radar systems and modules
  • Wearables
  • Radar systems for industrial use
  • UHF mixer
  • Surface-mount band-switching circuits
  • General-purpose Voltage Controlled Attenuators for high linearity applications
  • Compensators

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