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RN1106CT(TPL3)

  • RN1106CT(TPL3)
  • RN1106CT(TPL3)

RN1106CT(TPL3)

RN1106CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

SOT-23

RN1106CT(TPL3) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Reach Compliance Code unknown
Number of Elements 1
Power - Max 50mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 50mA
Power Dissipation-Max (Abs) 0.05W
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω

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