RN1108(T5L,F,T)

new-10%

Manufacturer part number:RN1108(T5L,F,T)

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO

Case Package:SOT-23

Datasheet:RN1108(T5L,F,T) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	100mW
Polarity	NPN
Element Configuration	Single
Power - Max	100mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	7V
hFE Min	80
Resistor - Base (R1)	22 kOhms
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 kOhms
RoHS Status	RoHS Compliant