RN1113(T5L,F,T)

new-10%

RN1113(T5L,F,T)

Manufacturer part number:RN1113(T5L,F,T)

Manufacturer:Toshiba Semiconductor and Storage

Description:RN1113(T5L,F,T) datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:RN1113(T5L,F,T) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM
Packaging	Cut Tape (CT)
Published	2014
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	100mW
Polarity	NPN
Element Configuration	Single
Power - Max	100mW
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	120
Resistor - Base (R1)	47 kOhms
Continuous Collector Current	100mA
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.052553	$0.052553
500	$0.038642	$19.321
1000	$0.032202	$32.202
2000	$0.029543	$59.086
5000	$0.027610	$138.05
10000	$0.025684	$256.84
15000	$0.024840	$372.6
50000	$0.024424	$1221.2