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RN1414,LF

RN1414,LF

RN1414,LF

Toshiba Semiconductor and Storage

RN1414,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

RN1414,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Polarity NPN
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Resistor - Base (R1) 1 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03481 $0.10443

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